NYCU × HHRI × Hong Young SemiconductorInnovative SiC Circuits Achieve Stable Operation at 300°C

Compound semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are known for their high efficiency, high breakdown voltage, and ability to withstand extreme temperatures. These materials form the foundation of high-power, energy-efficient technologies that drive electric vehicles, 5G communications, and fast-charging systems. To bridge academia's deep expertise in GaN-based semiconductors with applications and manufacturing resources within the industry, the Hon Hai Research Institute began collaborating in mid-2022 with Associate Professor Tian-Li Wu and his team from the Institute of Electronics at National Yang Ming Chiao Tung University (NYCU).

According to Professor Wu, the Semiconductor Research Center at that time was developing SiC power devices and seeking to enhance its chip-level design and reliability analysis capabilities. His team, already highly experienced in SiC device design and reliability testing, thus became a strong match. The two sides shared a common vision and complementary strengths, laying the groundwork for a fruitful partnership.

Building a Vertically Integrated SiC R&D Chain

In the early stages, the collaboration focused on material and process reliability. Over time, it expanded to include system-level verification and evolved into a vertically integrated model spanning chip design, reliability testing, and system applications. Within this model, Hong Young Semiconductor, a subsidiary of Hon Hai Technology Group, plays a crucial supporting role.

“This collaboration is a tightly connected three-way partnership,” said Professor Wu. “The NYCU team and the Semiconductor Research Center jointly handle device design and circuit layout; Hong Young Semiconductor takes charge of fabrication and process execution; and finally, our NYCU team conducts electrical failure analysis and reliability testing.”

After each round of experimentation, the NYCU team and the Semiconductor Research Center jointly review the test results to identify root causes of problems, plan the next phase of design and process optimization, and provide concrete feedback to Hong Young Semiconductor to drive continuous improvements. In addition, throughout the collaboration, the Semiconductor Research Center regularly contributes system-side and application-oriented insights, enabling the NYCU team to align its design and testing more closely with practical needs and evolving market trends.

Building on a silicon carbide process, the team successfully developed a single-chip integrated circuit technology designed for use in extreme environments. This industry-leading achievement has been officially unveiled and has attracted considerable attention across the industry.

Professor Wu explained that the core advantage of this technology lies in its ability to maintain stable performance at 300°C, thus overcoming the limitations of conventional silicon components. SiC, with its wide bandgap and high thermal conductivity, effectively reduces leakage current and enhances reliability, making it one of the most promising materials for high-temperature, high-power applications.

The collaboration also resulted in other innovative designs. For instance, in circuit architecture, the integration of 4H-SiC MOSFETs with Insulated-Gate Resistor Loads (IGRL) on a single chip enables automatic gain compensation in response to input voltage variations. The result is high linearity, wide output swing, a simplified architecture, and excellent high-frequency stability. Even at 300°C, the circuit maintains MHz-level bandwidth and remains compatible with existing SiC power device fabrication processes. This breakthrough holds strong potential for mass production and marks a key technological advancement for applications such as automotive electronics, aerospace control systems, and high-temperature sensing.

A Dual-Track Strategy Shaping the Future

“A successful industry-academia collaboration depends on two things: aligned goals and complementary roles,” said Professor Wu. “Innovation alone is not enough. If it doesn’t address real-world needs, it won’t take root. This three-way partnership has not only generated technical results but also created a positive cycle between academic research and industrial practice. That's what truly drives the industry forward.”

Looking ahead, Wu expressed strong support for the dual-track strategy championed by HHRI: AI for Semiconductor and Semiconductor for AI. The two directions, he explained, reinforce each other. The former applies AI to accelerate semiconductor R&D through process optimization and reliability prediction, while the latter focuses on developing higher-performance, energy-efficient semiconductor devices to meet the immense computational demands of the AI era.

The NYCU team will continue its collaboration with the Hon Hai Research Institute to pursue further breakthroughs. “This dual-track approach not only enhances R&D efficiency,” Wu notes. “It also fosters a new symbiotic ecosystem where AI and semiconductor technologies evolve together. That synergy will define the future of the industry.”